CCD and CMOS are two common image sensor technologies, which differ in imaging process, integration, power consumption, and performance indicators.
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Imaging Process: CCD and CMOS use the same photosensitive material, but their readout processes differ. CCD transfers signals in a complex frame or line manner, requiring the coordination of sync signals and clock signals, resulting in a complex circuit and slower readout rate. Meanwhile, CMOS reads signals in a similar manner to DRAM, with a simpler circuit and higher readout rate.
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Integration: With the advantage of large-scale integration manufacturing processes, CMOS image sensors can integrate multiple functions onto a single chip, including A/D conversion, signal processing, automatic gain control, precision amplification, and storage functions. CCD, on the other hand, requires multiple chips to achieve similar functionality.
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Power, Consumption, and Size: CCD requires multiple power supplies, has higher power consumption, and larger size. In contrast, CMOS only requires a single power supply (3V~5V), consumes about 1/10th of the power of CCD, and can be made much smaller due to its highly integrated chip design.
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Performance Indicators: While CCD technology is mature, high-end CMOS image quality temporarily may not match that of CCD, but some indicators (such as transmission rate) have surpassed CCD. With the continuous improvement of CMOS integration processes, some CMOS chips have sensitivity levels comparable to CCDs. Moreover, the emergence and maturity of back-illuminated CMOS have made it a mainstream trend in the market, gradually replacing CCDs.
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